Spaced apart first and second fins are formed on a substrate. An isolation layer is formed on the substrate between the first and second fins. A gate electrode is formed on the isolation layer and crossing the first and second fins. Source/drain regions are formed on the first and second fins adjacent the gate electrode. After forming the source/drain regions, a portion of the gate electrode between the first and second fins is removed to expose the isolation layer. The source/drain regions may be formed by epitaxial growth.