Invention Grant
- Patent Title: Method of fabricating a transistor channel structure with uniaxial strain
-
Application No.: US15261226Application Date: 2016-09-09
-
Publication No.: US09935019B2Publication Date: 2018-04-03
- Inventor: Shay Reboh , Laurent Grenouillet , Frederic Milesi , Yves Morand , Francois Rieutord
- Applicant: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1558477 20150911
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/265 ; H01L21/762 ; H01L29/08 ; H01L29/66 ; H01L29/78 ; H01L21/266 ; H01L21/02 ; H01L21/223 ; H01L21/8238
Abstract:
Method for creation of stressed channel structure transistors wherein at least one amorphizing ion implantation of the surface layer of a substrate of the semiconductor-on-insulator type is carried out through openings in a mask, so as to render zones of the surface layers amorphous and to induce relaxation of a zone intended to form a channel and located between the zones that have been rendered amorphous, the relaxation being carried out in a direction orthogonal to that in which it is intended that the channel current flows.
Public/Granted literature
- US20170076997A1 METHOD OF FABRICATING A TRANSISTOR CHANNEL STRUCTURE WITH UNIAXIAL STRAIN Public/Granted day:2017-03-16
Information query
IPC分类:
