Invention Grant
- Patent Title: Method for forming semiconductor structure
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Application No.: US15288041Application Date: 2016-10-07
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Publication No.: US09935024B2Publication Date: 2018-04-03
- Inventor: Pei-Chun Tsai , Wei-Sen Chang , Tin-Hao Kuo , Hao-Yi Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: G01R31/00
- IPC: G01R31/00 ; G01R31/28 ; H01L21/66 ; H01L23/31 ; H01L23/00 ; H01L21/78 ; H01L21/48 ; H01L21/56 ; H01L23/538 ; H01L25/10 ; H01L25/00 ; G01R1/073 ; G01R31/02
Abstract:
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure includes a conductive structure formed in the trench and on the protection layer. The conductive structure is electrically connected to the conductive pad, and the conductive structure has a concave top surface, and the lowest point of the concave top surface is higher than the top surface of the protection layer.
Public/Granted literature
- US20170316989A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2017-11-02
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