Invention Grant
- Patent Title: Semiconductor module
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Application No.: US15124809Application Date: 2014-05-09
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Publication No.: US09935040B2Publication Date: 2018-04-03
- Inventor: Shunsuke Fushie , Yu Kawano , Yoshihito Asao
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Agent Richard C. Turner
- International Application: PCT/JP2014/062469 WO 20140509
- International Announcement: WO2015/170399 WO 20151112
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H02M7/537 ; H02M7/00
Abstract:
A semiconductor module can be realized, which is formed by mounting an electronic component and a bus bar by solder on a lead frame including a plurality of terminals, wherein a solder flow suppressing section capable of restricting a direction of flow of solder on the lead frame is formed in the vicinity of the solder portion of the component mounted by solder, and by this configuration, positional deviation, such as rotation or movement of the mounted component, is suppressed and the size of the module can be made compact.
Public/Granted literature
- US20170018486A1 SEMICONDUCTOR MODULE Public/Granted day:2017-01-19
Information query
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