Invention Grant
- Patent Title: Semiconductor device and method of forming cantilevered protrusion on a semiconductor die
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Application No.: US15231025Application Date: 2016-08-08
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Publication No.: US09935045B2Publication Date: 2018-04-03
- Inventor: Francis J. Carney , Michael J. Seddon
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/498 ; H01L21/48 ; H01L21/3065 ; H01L21/78 ; H01L23/495 ; H01L21/67 ; H01L21/66 ; H01L21/56 ; H01L23/31 ; H02M3/158 ; H01L23/482 ; H01L25/065 ; H01L25/00 ; H01L23/544 ; H01L23/00 ; H01L21/02 ; H01L21/304 ; H01L21/308 ; H01L27/146
Abstract:
A semiconductor device has a first semiconductor die with a base material. A covering layer is formed over a surface of the base material. The covering layer can be made of an insulating material or metal. A trench is formed in the surface of the base material. The covering layer extends into the trench to provide the cantilevered protrusion of the covering layer. A portion of the base material is removed by plasma etching to form a cantilevered protrusion extending beyond an edge of the base material. The cantilevered protrusion can be formed by removing the base material to the covering layer, or the cantilevered protrusion can be formed within the base material under the covering layer. A second semiconductor die is disposed partially under the cantilevered protrusion. An interconnect structure is formed between the cantilevered protrusion and second semiconductor die.
Public/Granted literature
- US20170084520A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING CANTILEVERED PROTRUSION ON A SEMICONDUCTOR DIE Public/Granted day:2017-03-23
Information query
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