A semiconductor structure is provided that includes a contact structure containing a gouged upper surface embedded in at least a middle-of-the-line (MOL) dielectric material, wherein the contact structure contacts an underlying doped semiconductor material structure. A first metallization structure containing a gouged upper surface is in contact with the gouged upper surface of the contact structure and embedded in a first interconnect dielectric material. A second metallization structure is in contact with the gouged upper surface of the first metallization structure and embedded at least within a second interconnect dielectric material.