Invention Grant
- Patent Title: Methods of manufacturing a semiconductor device by forming a separation trench
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Application No.: US15273086Application Date: 2016-09-22
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Publication No.: US09935055B2Publication Date: 2018-04-03
- Inventor: Andreas Meiser , Markus Zundel , Martin Poelzl , Paul Ganitzer , Georg Ehrentraut
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L23/544 ; H01L21/762 ; H01L23/00 ; H01L21/822 ; H01L23/538 ; H01L21/784 ; H01L29/78
Abstract:
A method of manufacturing a semiconductor device includes forming a separation trench into a first main surface of a semiconductor substrate and removing substrate material from a second main surface of the semiconductor substrate, so as to thin the substrate to a thickness of less than 100 μm, the second main surface being opposite to the first main surface, so as to uncover a bottom side of the trench. Additional methods of manufacturing semiconductor devices are provided.
Public/Granted literature
- US20170012002A1 Methods of Manufacturing a Semiconductor Device by Forming a Separation Trench Public/Granted day:2017-01-12
Information query
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