Invention Grant
- Patent Title: Semiconductor element and semiconductor device
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Application No.: US14807954Application Date: 2015-07-24
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Publication No.: US09935093B2Publication Date: 2018-04-03
- Inventor: Kazushige Iwamoto
- Applicant: LAPIS SEMICONDUCTOR CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Kanagawa
- Agency: Kubotera & Associates, LLC
- Priority: JP2014-157588 20140801
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/02 ; H01L23/60 ; H01L29/06 ; H01L29/36
Abstract:
A semiconductor device includes a voltage generation circuit configured to generate a specific voltage; a first terminal configured to output the specific voltage; a second terminal configured to receive a temperature sensitive voltage; an analog/digital conversion circuit configured to convert the specific voltage and the temperature sensitive voltage to digital values; a storage unit configured to store the specific voltage and the temperature sensitive voltage; and a third terminal configured to transmit the specific voltage and the temperature sensitive voltage to an external semiconductor device.
Public/Granted literature
- US20160035713A1 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE Public/Granted day:2016-02-04
Information query
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