Invention Grant
- Patent Title: Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device
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Application No.: US15370878Application Date: 2016-12-06
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Publication No.: US09935096B2Publication Date: 2018-04-03
- Inventor: Masuhide Ikeda
- Applicant: SEIKO EPSON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SEIKO EPSON CORPORATION
- Current Assignee: SEIKO EPSON CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2015-244928 20151216
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L31/111 ; H01L27/02 ; H01L27/06

Abstract:
Provided is an electrostatic protection circuit that has little leakage current under normal operation and allows a trigger voltage to be set comparatively freely, without requiring a special process step. This electrostatic protection circuit is provided with a series circuit including a transistor, a predetermined number of diodes and an impedance element that are connected in series between the first node and the second node, and a discharge circuit configured to send current from the first node to the second node following an increase in a potential difference that occurs between both ends of the impedance element, when the first node reaches a higher potential than the second node and current flows through the series circuit. The predetermined number of diodes are connected between the source and the back gate of the transistor.
Public/Granted literature
- US20170179106A1 ELECTROSTATIC PROTECTION CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2017-06-22
Information query
IPC分类: