Invention Grant
- Patent Title: Electronic device with integrated galvanic isolation, and manufacturing method of the same
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Application No.: US15279050Application Date: 2016-09-28
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Publication No.: US09935098B2Publication Date: 2018-04-03
- Inventor: Vincenzo Palumbo , Elisabetta Pizzi
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group LLP
- Priority: ITUA2016A2049 20160325
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/02 ; H01L49/02 ; H01L23/522 ; H01L23/00 ; H01L21/768 ; H01L21/283
Abstract:
An electronic device includes a semiconductor body and a dielectric layer extending over the semiconductor body. A galvanic isolation module includes a first metal region extending in the dielectric layer at a first height and a second metal region extending in the dielectric layer at a second height greater than the first height. The first and second metal regions are capacitively or magnetically coupleable together. The second metal region includes a side wall and a bottom wall coupled to one another through rounded surface portions.
Public/Granted literature
- US20170278841A1 ELECTRONIC DEVICE WITH INTEGRATED GALVANIC ISOLATION, AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2017-09-28
Information query
IPC分类:
