Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15607599Application Date: 2017-05-29
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Publication No.: US09935105B2Publication Date: 2018-04-03
- Inventor: Makoto Yabuuchi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2015-179439 20150911
- Main IPC: G11C7/00
- IPC: G11C7/00 ; H01L27/088 ; G11C7/10 ; H01L27/06 ; H01L27/02

Abstract:
Data hold time is controlled without excessively increasing a circuit area. A semiconductor device includes a data buffer and a flip-flop formed of fin. As a delay line, gate wirings being in the same layer as gate electrodes of the fin are provided in a data signal path from a data output node of the data buffer to a data input node of the flip-flop.
Public/Granted literature
- US20170263605A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-09-14
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