Invention Grant
- Patent Title: Memory device with manufacturable cylindrical storage node
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Application No.: US15410031Application Date: 2017-01-19
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Publication No.: US09935110B2Publication Date: 2018-04-03
- Inventor: Hyoung Seub Rhie
- Applicant: Conversant Intellectual Property Management Inc.
- Applicant Address: CA Ottawa
- Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee Address: CA Ottawa
- Agency: Conversant IP Management Corp
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L49/02

Abstract:
A high capacitance embedded capacitor and associated fabrication processes are disclosed for fabricating a capacitor stack in a multi-layer stack to include a first capacitor plate conductor formed with a cylinder-shaped storage node electrode formed in the multi-layer stack, a capacitor dielectric layer surrounding the cylinder-shaped storage node electrode, and a second capacitor plate conductor formed from a conductive layer in the multi-layer stack that is sandwiched between a bottom and top dielectric layer, where the cylinder-shaped storage node electrode is surrounded by and extends through the conductive layer.
Public/Granted literature
- US20170141117A1 MEMORY DEVICE WITH MANUFACTURABLE CYLINDRICAL STORAGE NODE Public/Granted day:2017-05-18
Information query
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