- Patent Title: Semiconductor device, electronic component, and electronic device
-
Application No.: US15621432Application Date: 2017-06-13
-
Publication No.: US09935129B2Publication Date: 2018-04-03
- Inventor: Kei Takahashi , Hiroyuki Miyake , Hidekazu Miyairi
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2014-044471 20140307
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G09G3/3291 ; G09G3/36

Abstract:
To provide a semiconductor device including a small-area circuit with high withstand voltage, an oxide semiconductor (OS) transistor is used as some of transistors included in a circuit handling an analog signal in a circuit to which high voltage is applied. The use of an OS transistor with high withstand voltage as a transistor requiring resistance to high voltage enables the circuit area to be reduced without lowering the performance, as compared to the case using a Si transistor. Furthermore, an OS transistor can be provided over a Si transistor, so that transistors using different semiconductor layers can be stacked, resulting in a much smaller circuit area.
Public/Granted literature
- US20170278876A1 SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE Public/Granted day:2017-09-28
Information query
IPC分类: