Invention Grant
- Patent Title: Image sensor including transfer gates in deep trenches
-
Application No.: US15441437Application Date: 2017-02-24
-
Publication No.: US09935142B2Publication Date: 2018-04-03
- Inventor: Kwang Hwangbo , Sung-Kun Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0079252 20160624
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L27/146 ; H04N5/378
Abstract:
An image sensor is described. The image sensor includes a photodiode that is formed in a substrate, a floating diffusion region that vertically overlaps with a first portion of the photodiode, a shallow trench isolation (STI) region that vertically overlaps with a second portion of the photodiode and has an elbow shape, and a transfer gate that is adjacent to at least two sides of the photodiode and has an elbow shape.
Public/Granted literature
- US20170373108A1 IMAGE SENSOR INCLUDING TRANSFER GATES IN DEEP TRENCHES Public/Granted day:2017-12-28
Information query
IPC分类:
