A silicon carbide semiconductor device can switch between an on-state and an off-state by controlling a channel region with an application of a gate voltage. The silicon carbide semiconductor device includes a silicon carbide layer, a gate insulating film, and a gate electrode. The silicon carbide layer includes a channel region. The gate insulating film covers the channel region. The gate electrode faces the channel region with the gate insulating film therebetween. The resistance of the channel region in the on-state takes a minimum value at a temperature of not less than 100° C. and not more than 150° C.