Invention Grant
- Patent Title: Transistor having germanium channel on silicon nanowire and fabrication method thereof
-
Application No.: US15345781Application Date: 2016-11-08
-
Publication No.: US09935189B2Publication Date: 2018-04-03
- Inventor: Seongjae Cho , Mina Yun
- Applicant: Gachon University of Industry-Academic cooperation Foundation
- Applicant Address: KR
- Assignee: GACHON UNIVERSITY OF INDUSTRY—ACADEMIC COOPERATION FOUNDATION
- Current Assignee: GACHON UNIVERSITY OF INDUSTRY—ACADEMIC COOPERATION FOUNDATION
- Current Assignee Address: KR
- Agent Gerald E. Hespos; Michael J. Porco; Matthew T. Hespos
- Priority: KR10-2015-0156652 20151109
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/775 ; H01L21/02 ; H01L21/265 ; H01L29/423 ; H01L29/66 ; H01L29/786 ; H01L29/10 ; H01L29/161
Abstract:
The present invention provides a transistor and a fabrication method thereof. By a silicon nanowire as a core region being serially wrapped by a germanium channel, a gate insulating film and a gate, the present invention enables to form a potential well for storing holes as a carrier of HHMT in the germanium channel by a valance band energy offset between the silicon core region and the germanium channel, to gain maximum gate controllability to the germanium channel, and to simplify a fabricating process by simultaneously forming the germanium channel and the gate insulating film in one process.
Public/Granted literature
- US20170133495A1 TRANSISTOR HAVING GERMANIUM CHANNEL ON SILICON NANOWIRE AND FABRICATION METHOD THEREOF Public/Granted day:2017-05-11
Information query
IPC分类:
