A method of forming a field effect transistor is provided. The method of forming a field effect transistor may include forming a dummy gate perpendicular to and covering a channel region of a semiconductor fin, such that a source drain region of the semiconductor fin remains uncovered, depositing a metal layer above and in direct contact with a sidewall of the dummy gate, and above and in direct contact with a top and a sidewall of the source drain region, and forming a metal silicide source drain in the source drain region by annealing the metal layer and the semiconductor fin, such that the metal silicide source drain overlaps the dummy gate.