Invention Grant
- Patent Title: Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same
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Application No.: US15501514Application Date: 2014-10-14
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Publication No.: US09935207B2Publication Date: 2018-04-03
- Inventor: Suk Ho Choi , Dong Hee Shin , Sung Kim
- Applicant: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
- Applicant Address: KR Yongin-si
- Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
- Current Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
- Current Assignee Address: KR Yongin-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2014-0108713 20140821
- International Application: PCT/KR2014/009605 WO 20141014
- International Announcement: WO2016/027925 WO 20160225
- Main IPC: H01L29/88
- IPC: H01L29/88 ; C01B33/023 ; C01B31/04 ; H01L29/16 ; H01L29/15 ; H01L31/0352 ; H01L31/18 ; B82Y30/00 ; B82Y40/00
Abstract:
Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.
Public/Granted literature
- US20170229589A1 TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-08-10
Information query
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