Invention Grant
- Patent Title: Back contact structure for photovoltaic devices such as copper-indium-diselenide solar cells
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Application No.: US13455282Application Date: 2012-04-25
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Publication No.: US09935211B2Publication Date: 2018-04-03
- Inventor: Alexey Krasnov
- Applicant: Alexey Krasnov
- Applicant Address: US MI Auburn Hills
- Assignee: Guardian Glass, LLC
- Current Assignee: Guardian Glass, LLC
- Current Assignee Address: US MI Auburn Hills
- Agency: Nixon & Vanderhye P.C.
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/0224 ; H01L31/032 ; H01L31/0392 ; H01L31/0749
Abstract:
A back contact configuration for a CIGS-type photovoltaic device is provided. According to certain examples, the back contact configuration includes an optical matching layer and/or portion of or including MoSe2 having a thickness substantially corresponding to maxima of absorption of reflected light in CIGS-type absorbers used in certain photovoltaic devices. Certain example methods for making the back contact configuration wherein a thickness of the MoSe2 layer and/or portion can be controlled to be within thickness ranges that correspond to maxima of CIGS light absorption for reflected solar light are also provided.
Public/Granted literature
- US20130284252A1 BACK CONTACT STRUCTURE FOR PHOTOVOLTAIC DEVICES SUCH AS COPPER-INDIUM-DISELENIDE SOLAR CELLS Public/Granted day:2013-10-31
Information query
IPC分类:
