Invention Grant
- Patent Title: Plasmonic light emitting diode
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Application No.: US15266088Application Date: 2016-09-15
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Publication No.: US09935239B1Publication Date: 2018-04-03
- Inventor: Yaojia Chen , Ning Li , Devendra K. Sadana , Jinghui Yang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06 ; H01L33/30 ; H01L33/60 ; B82Y10/00 ; B82Y30/00
Abstract:
A light emitting diode includes a square quantum well structure, the quantum well structure including III-V materials. A dielectric layer is formed on the quantum well structure. A plasmonic metal is formed on the dielectric layer and is configured to excite surface plasmons in a waveguide mode that is independent of light wavelength generated by the quantum well structure to generate light.
Public/Granted literature
- US20180076353A1 PLASMONIC LIGHT EMITTING DIODE Public/Granted day:2018-03-15
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