Invention Grant
- Patent Title: Near-infrared light emitting device using semiconductor nanocrystals
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Application No.: US14101867Application Date: 2013-12-10
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Publication No.: US09935240B2Publication Date: 2018-04-03
- Inventor: Geoffrey J. S. Supran , Katherine W. Song , Gyuweon Hwang , Raoul Emile Correa , Yasuhiro Shirasaki , Moungi G. Bawendi , Vladimir Bulovic , Jennifer Scherer
- Applicant: Geoffrey J. S. Supran , Katherine W. Song , Gyuweon Hwang , Raoul Emile Correa , Yasuhiro Shirasaki , Moungi G. Bawendi , Vladimir Bulovic , Jennifer Scherer
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Steptoe & Johnson LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L33/28 ; H01L51/42 ; H01L31/055 ; H01L21/02 ; H01L31/0352 ; H01L51/50
Abstract:
A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 μm. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.
Public/Granted literature
- US20140158977A1 NEAR-INFRARED LIGHT EMITTING DEVICE USING SEMICONDUCTOR NANOCRYSTALS Public/Granted day:2014-06-12
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