Invention Grant
- Patent Title: Electronic device
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Application No.: US14613241Application Date: 2015-02-03
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Publication No.: US09935263B2Publication Date: 2018-04-03
- Inventor: Kwang-Hee Cho
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2014-0116144 20140902
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; G06F3/06 ; H01L27/22

Abstract:
An electronic device includes a semiconductor memory. The semiconductor memory includes a selection element layer; a material layer directly coupled to a first surface of the selection element layer and including a conductive filament; and a variable resistance layer coupled to a second surface of the selection element layer opposite to the first surface.
Public/Granted literature
- US20160064659A1 ELECTRONIC DEVICE Public/Granted day:2016-03-03
Information query
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