Invention Grant
- Patent Title: Method for producing an organic CMOS circuit and organic CMOS circuit protected against UV radiation
-
Application No.: US14899888Application Date: 2014-07-31
-
Publication No.: US09935282B2Publication Date: 2018-04-03
- Inventor: Mohammed Benwadih , Romain Coppard , Olivier Poncelet
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR
- Assignee: Commissariat a l'Energie Atomique et aux Energies
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies
- Current Assignee Address: FR
- Agency: Forge IP, PLLC
- Priority: FR1357883 20130808
- International Application: PCT/FR2014/051993 WO 20140731
- International Announcement: WO2015/019004 WO 20150212
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L51/05 ; H01L51/00 ; H01L27/28
Abstract:
An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.
Public/Granted literature
- US20160141529A1 Method For Producing An Organic CMOS Circuit And Organic CMOS Circuit Protected Against UV Radiation Public/Granted day:2016-05-19
Information query
IPC分类:
