Invention Grant
- Patent Title: High-frequency semiconductor amplifier
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Application No.: US15008112Application Date: 2016-01-27
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Publication No.: US09935581B2Publication Date: 2018-04-03
- Inventor: Kazutaka Takagi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-014034 20150128
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F1/56 ; H03F3/19 ; H03F3/217 ; H01P5/02 ; H01L23/66 ; H03F3/60 ; H01L23/00 ; H01P1/24 ; H01P1/28

Abstract:
According to one embodiment, a high-frequency semiconductor amplifier includes an input terminal, an input matching circuit, a high-frequency semiconductor amplifying element, an output matching circuit and an output terminal. The input terminal is inputted with a fundamental signal. The fundamental signal has a first frequency band and a first center frequency in the first frequency band. The input matching circuit includes an input end and an output end. The input end of the input matching circuit is connected to the input terminal. The high-frequency semiconductor amplifying element includes an input end and an output end. The input end of the high-frequency semiconductor amplifying element is connected to the output end of the input matching circuit. The high-frequency semiconductor amplifying element is configured to amplify the fundamental signal.
Public/Granted literature
- US20160218678A1 HIGH-FREQUENCY SEMICONDUCTOR AMPLIFIER Public/Granted day:2016-07-28
Information query
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