Invention Grant
- Patent Title: Multi-state attenuator
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Application No.: US15339737Application Date: 2016-10-31
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Publication No.: US09935614B2Publication Date: 2018-04-03
- Inventor: Ravindranath Shrivastava
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Martin J. Jaquez, Esq.; John Land, Esq.
- Main IPC: G05F3/20
- IPC: G05F3/20 ; H03K17/693 ; H03H11/24

Abstract:
Multi-state radio frequency (RF) attenuator configurations that include bridged-T type, pi-type, and T-type structures each having a programmable throughput section and a coupled programmable shunt section. The throughput sections and shunt sections may be configured in various combinations of parallel and serial fixed or selectable resistance elements such that multiple resistance states and impedance matching states can be programmatically selected, and may include stacked switch elements to withstand applied voltages to a specified design level.
Public/Granted literature
- US20170104471A1 Multi-State Attenuator Public/Granted day:2017-04-13
Information query
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