Devices and methods are disclosed, related to high power diode switches. In some embodiments, a radio-frequency switch circuit can include a first switchable path implemented between a pole and a first throw, the first switchable path including one or more PIN diodes, and a second switchable path implemented between the pole and a second throw, the second switchable path including one or more PIN diodes. The radio-frequency switch circuit can further include a switchable shunt path implemented between the second throw and a ground, the switchable shunt path including at least one shunt PIN diode and a capacitance between the second throw and the at least one shunt PIN diode. The pole can be an antenna port, and the first and second throws can be transmit and receive ports, respectively.