Invention Grant
- Patent Title: Peeling method and light-emitting device
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Application No.: US14532634Application Date: 2014-11-04
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Publication No.: US09937698B2Publication Date: 2018-04-10
- Inventor: Seiji Yasumoto , Masataka Sato , Tomoya Aoyama , Ryu Komatsu
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2013-230532 20131106; JP2013-249158 20131202; JP2014-029755 20140219
- Main IPC: B32B38/10
- IPC: B32B38/10 ; B32B43/00 ; H01L51/00 ; H01L21/687 ; H01L51/52 ; H01L27/32

Abstract:
The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer; a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger; and a fourth step of separating the peeling layer and the layer to be peeled are performed. The use of the thin peeling layer can improve the yield of a peeling process regardless of the structure of the layer to be peeled.
Public/Granted literature
- US20150123106A1 Peeling Method and Light-Emitting Device Public/Granted day:2015-05-07
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