Invention Grant
- Patent Title: Stress decoupled piezoresistive relative pressure sensor and method for manufacturing the same
-
Application No.: US15628926Application Date: 2017-06-21
-
Publication No.: US09938135B2Publication Date: 2018-04-10
- Inventor: Steffen Bieselt
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dreden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dreden
- Agency: Harrity & Harrity, LLP
- Priority: DE102016211513 20160627
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00 ; G01L9/00

Abstract:
Embodiments provide a MEMS (Micro Electro Mechanical System) pressure sensor comprising a semiconductor substrate, wherein the semiconductor substrate comprises a stress decoupling structure adapted to stress decouple a first portion of the semiconductor substrate from a second portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate comprises a first buried empty space, wherein the second portion of the semiconductor substrate comprises a second buried empty space, and wherein the semiconductor substrate comprises a pressure channel fluidically connecting the first buried empty space and the second buried empty space.
Public/Granted literature
- US20170369306A1 STRESS DECOUPLED PIEZORESISTIVE RELATIVE PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-12-28
Information query