Invention Grant
- Patent Title: Nonparallel island etching
-
Application No.: US15033015Application Date: 2013-10-30
-
Publication No.: US09938139B2Publication Date: 2018-04-10
- Inventor: Roger A. McKay , Patrick W. Sadik
- Applicant: Hewlett-Packard Development Company, L.P.
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Agency: Rathe Lindenbaum LLP
- International Application: PCT/US2013/067600 WO 20131030
- International Announcement: WO2015/065395 WO 20150507
- Main IPC: B81C1/00
- IPC: B81C1/00 ; H01M4/38 ; H01M4/04 ; C23C14/58 ; C23F1/16 ; C23F1/02

Abstract:
Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.
Public/Granted literature
- US20160244885A1 NONPARALLEL ISLAND ETCHING Public/Granted day:2016-08-25
Information query