Invention Grant
- Patent Title: Over-temperature detector with test mode
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Application No.: US14574026Application Date: 2014-12-17
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Publication No.: US09939335B2Publication Date: 2018-04-10
- Inventor: John M. Pigott
- Applicant: John M. Pigott
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: G01K15/00
- IPC: G01K15/00 ; G01K3/00

Abstract:
A device for over-temperature detection having a test mode is presented. The device includes a temperature detection circuit having first and second transistors. The temperature detection circuit is configured so that when an ambient temperature of the temperature detection circuit is less than a temperature threshold, a voltage at an emitter terminal of the second transistor is less than a voltage at an emitter terminal of the first transistor minus VT*In(N), and when the ambient temperature of the temperature detection circuit is greater than the temperature threshold, the voltage at the emitter terminal of the second transistor is greater than a voltage at the emitter terminal of the first transistor minus VT*In(N). The device includes a measurement circuit configured to generate an output voltage that is proportional to a difference between the temperature threshold of the temperature detection circuit and the ambient temperature of the temperature detection circuit.
Public/Granted literature
- US20160178457A1 OVER-TEMPERATURE DETECTOR WITH TEST MODE Public/Granted day:2016-06-23
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