Invention Grant
- Patent Title: Resist pattern-forming method
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Application No.: US15259160Application Date: 2016-09-08
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Publication No.: US09939729B2Publication Date: 2018-04-10
- Inventor: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-178978 20150910
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/30 ; G03F7/40 ; G03F7/038 ; G03F7/004 ; G03F7/11 ; C08F220/28 ; C08F220/38 ; C08F220/18 ; G03F7/16 ; G03F7/32

Abstract:
A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
Public/Granted literature
- US20170075224A1 RESIST PATTERN-FORMING METHOD Public/Granted day:2017-03-16
Information query
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