Invention Grant
- Patent Title: Memory system and control method of memory system
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Application No.: US15064930Application Date: 2016-03-09
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Publication No.: US09940274B2Publication Date: 2018-04-10
- Inventor: Daisuke Nakata , Shigeo Kurakata , Masashi Nakata
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G06F13/36
- IPC: G06F13/36 ; G06F13/28 ; G06F1/30 ; G06F3/06 ; G11C5/14

Abstract:
According to one embodiment, an interface of a memory system includes a circuit configured to adjust output resistance for data output. When the circuit has received a command in a second state, the circuit adjusts output resistance during a first period. The first period is a period from when the interface completes reception of the command to when the interface starts transmission of data read from the memory. The second state is a state in which power consumption is lower than that in a first state in which operation is caused by a command.
Public/Granted literature
- US20170046286A1 MEMORY SYSTEM AND CONTROL METHOD OF MEMORY SYSTEM Public/Granted day:2017-02-16
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