Invention Grant
- Patent Title: Hybrid LPDDR4-DRAM with cached NVM and flash-nand in multi-chip packages for mobile devices
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Application No.: US15199802Application Date: 2016-06-30
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Publication No.: US09940980B2Publication Date: 2018-04-10
- Inventor: Xiaobing Lee , Feng Yang , Yu Meng , Yunxiang Wu
- Applicant: Futurewei Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: Futurewei Technologies, Inc.
- Current Assignee: Futurewei Technologies, Inc.
- Current Assignee Address: US TX Plano
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F3/06 ; G06F11/14 ; G11C5/04 ; G06F12/02 ; G11C8/18 ; G06F13/16

Abstract:
An apparatus comprises a hybrid-memory multi-chip package (MCP) including a non-volatile memory (NVM) in an NVM die; a dynamic random access memory (DRAM) in two or more DRAM die, wherein a portion of the DRAM is allocated as a cache memory for the NVM; and a hybrid controller for the NVM and DRAM. The hybrid controller includes an NVM interface to the NVM; a DRAM interface to the cache memory; a host interface to communicate data with a host processor, wherein the host interface includes a parallel data bus for reading and writing data directly with both of the DRAM and the NVM; and logic circuitry configured to interleave access by the host processor and hybrid controller to the DRAM and NVM.
Public/Granted literature
- US20180005670A1 HYBRID LPDDR4-DRAM WITH CACHED NVM AND FLASH-NAND IN MULTI-CHIP PACKAGES FOR MOBILE DEVICES Public/Granted day:2018-01-04
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