A memory circuit includes plurality of bit-cells organized in a column, each bit-cell of the plurality is coupled to a first voltage supply terminal and a second voltage supply terminal. A word-line control circuit is coupled to each bit-cell of the plurality by way of a local bit-line. The word-line control circuit is configured to operatively couple the local bit-line with a global bit-line during a read operation. A first voltage generation circuit is coupled to the first voltage supply terminal. The first voltage generation circuit is configured to provide a first reduced voltage at the first voltage supply terminal during a first write operation. A second voltage generation circuit is coupled to the second voltage supply terminal. The second voltage generation circuit is configured to provide a second reduced voltage at the second voltage supply terminal during the first write operation.