Invention Grant
- Patent Title: Thin film transistor, display substrate having the same, and method of manufacturing the same
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Application No.: US14687080Application Date: 2015-04-15
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Publication No.: US09941143B2Publication Date: 2018-04-10
- Inventor: Chanwoo Yang , Do-Hyun Kim , Jeongju Park , Junhyun Park , Doohyoung Lee , Xinxing Li
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2014-0057332 20140513
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/467 ; H01L29/66 ; H01L21/4757 ; H01L29/417 ; H01L29/45 ; H01L27/12
Abstract:
A thin film transistor include a control electrode, a semiconductor layer on the control electrode, an input electrode, at least a portion of the input electrode being on the semiconductor layer, and an output electrode spaced apart from the input electrode, at least a portion of the output electrode being on the semiconductor layer. Each of the input electrode and the output electrode includes a wiring layer including a metal material, a dummy portion on a side part of the wiring layer, the dummy portion including an oxide of the metal material, and a protection layer on the wiring layer, the protection layer overlapping the wiring layer and the dummy portion.
Public/Granted literature
- US20150333183A1 THIN FILM TRANSISTOR, DISPLAY SUBSTRATE HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-11-19
Information query
IPC分类:
