Invention Grant
- Patent Title: Dielectric isolated SiGe fin on bulk substrate
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Application No.: US15288017Application Date: 2016-10-07
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Publication No.: US09941175B2Publication Date: 2018-04-10
- Inventor: Huiming Bu , Shogo Mochizuki , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/84 ; H01L29/66 ; H01L29/06 ; H01L21/02 ; H01L21/762 ; H01L27/12 ; H01L21/311
Abstract:
A method for forming fins on a semiconductor device includes etching trenches into a monocrystalline substrate to form first fins and forming a first dielectric layer at bottoms of the trenches. Second fins of a material having a different composition than the substrate are grown on sidewalls of the trenches. A second dielectric layer is formed over the second fins. The first fins are removed by etching. The second fins are processed to form fin field effect transistor devices.
Public/Granted literature
- US20170098584A1 DIELECTRIC ISOLATED SiGe FIN ON BULK SUBSTRATE Public/Granted day:2017-04-06
Information query
IPC分类:
