An advanced metal conductor structure is described. An integrated circuit device including a substrate having a dielectric layer is patterned. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer is disposed over the set of features in the patterned dielectric. A nitridized ruthenium layer is disposed over the adhesion promoting layer. A cobalt layer disposed over the nitridized ruthenium layer filling the set of features, wherein the cobalt layer is formed using a physical vapor deposition process.