Invention Grant
- Patent Title: Electrostatic discharge protection apparatus and process
-
Application No.: US15345134Application Date: 2016-11-07
-
Publication No.: US09941239B2Publication Date: 2018-04-10
- Inventor: Wen-Chien Chang , Hsiang-Tai Lu , Dai-Jang Chen , Chih-Hsien Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H05F3/02 ; H01L21/67 ; H01L23/60 ; H01L25/00 ; H01L23/498 ; H01L25/065
Abstract:
In a process, at least one circuit element is formed in a substrate. A conductive layer is formed over the substrate and in electrical contact with the at least one circuit element. Electrostatic charges are discharged from the substrate via the conductive layer.
Public/Granted literature
- US20170053890A1 ELECTROSTATIC DISCHARGE PROTECTION APPARATUS AND PROCESS Public/Granted day:2017-02-23
Information query
IPC分类:
