A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements and that are connected at a connection point between the self-arc-extinguishing type semiconductor elements; a positive-side DC electrode, a negative-side DC electrode, and an AC electrode that are connected to the positive arm and the negative arm; and a substrate on which a wiring pattern is formed, the wiring pattern connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side DC electrode, the negative-side DC electrode and the AC electrode. The positive-side DC electrode, the negative-side DC electrode, and the AC electrode are insulated from one another and arranged such that one of the electrodes faces each of the other two electrodes.