Invention Grant
- Patent Title: Power semiconductor device including well extension region and field-limiting rings
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Application No.: US15030714Application Date: 2014-01-29
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Publication No.: US09941269B2Publication Date: 2018-04-10
- Inventor: Katsumi Nakamura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2014/051910 WO 20140129
- International Announcement: WO2015/114748 WO 20150806
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/06 ; H01L29/10 ; H01L29/08 ; H01L29/739 ; H01L29/423 ; H01L29/40

Abstract:
A drift region has a first conductivity type. A well region is at least partially included in an interface area, has an end portion between the interface area and an edge termination area, and has a second conductivity type. An extension region extends outward from the well region, is shallower than the well region, and has the second conductivity type. A plurality of field-limiting rings are provided outside the extension region in the edge termination area. Each of the field-limiting rings together with the drift region located on the inner side forms a unit structure. The field-limiting ring located closer to the outside has a lower proportion of a width to a width of the unit structure. The unit structure located closer to the outside has a lower average dose.
Public/Granted literature
- US20160260703A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2016-09-08
Information query
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