Invention Grant
- Patent Title: Semiconductor device with a switchable and a non-switchable diode region
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Application No.: US15209473Application Date: 2016-07-13
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Publication No.: US09941274B2Publication Date: 2018-04-10
- Inventor: Johannes Georg Laven , Roman Baburske
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015111371 20150714
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/739 ; H01L29/08 ; H01L27/07 ; H01L29/861
Abstract:
A semiconductor device includes at least one IGBT cell region, at least one switchable free-wheeling diode region, and at least one non-switchable free-wheeling diode region integrated in the same semiconductor substrate as the at least one IGBT cell region and the at least one switchable free-wheeling diode region.
Public/Granted literature
- US20170018548A1 Semiconductor Device with a Switchable and a Non-Switchable Diode Region Public/Granted day:2017-01-19
Information query
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