A semiconductor device is provided. The semiconductor device includes a first fin-type pattern on a substrate, a first interlayer insulating layer on the substrate, covering the first fin-type pattern and including a first trench, the first trench intersecting the first fin-type pattern, a first gate electrode on the first fin-type pattern, filling the first trench, an upper surface of the first gate electrode being coplanar with an upper surface of the first interlayer insulating layer, a capping layer extending along the upper surface of the first interlayer insulating layer and along the upper surface of the first gate electrode, and a second interlayer insulating layer on the capping layer, the second interlayer insulating layer including a material different from that of the capping layer.