Invention Grant
- Patent Title: Through electrode of a device substrate
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Application No.: US14919920Application Date: 2015-10-22
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Publication No.: US09941322B2Publication Date: 2018-04-10
- Inventor: Satoru Wakiyama , Hiroshi Ozaki
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Chip Law Group
- Priority: JP2012-008278 20120118
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/146 ; H01L31/02 ; H01L23/48 ; H01L21/288 ; H01L23/532

Abstract:
A semiconductor unit includes: a first device substrate including a first semiconductor substrate and a first wiring layer, in which the first wiring layer is provided on one surface side of the first semiconductor substrate; a second device substrate including a second semiconductor substrate and a second wiring layer, in which the second device substrate is bonded to the first device substrate, and the second wiring layer is provided on one surface side of the second semiconductor substrate; a through-electrode penetrating the first device substrate and a part or all of the second device substrate, and electrically connecting the first wiring layer and the second wiring layer to each other; and an insulating layer provided in opposition to the through-electrode, and penetrating one of the first semiconductor substrate and the second semiconductor substrate.
Public/Granted literature
Information query
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