Invention Grant
- Patent Title: Semiconductor device having electrode and manufacturing method thereof
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Application No.: US15149773Application Date: 2016-05-09
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Publication No.: US09941372B2Publication Date: 2018-04-10
- Inventor: Pai-Chieh Wang , Tsung Yao Wen , Jyh-Huei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/66 ; H01L29/51 ; H01L21/28 ; H01L29/49 ; H01L29/40
Abstract:
The invention relates to integrated circuit fabrication, and more particularly to a semiconductor device with an electrode. An exemplary structure for a semiconductor device comprises a semiconductor substrate; an electrode over the semiconductor substrate, wherein the electrode comprises a trench in an upper portion of the electrode; and a dielectric feature in the trench.
Public/Granted literature
- US20160254360A1 Semiconductor Device Having Electrode and Manufacturing Method Thereof Public/Granted day:2016-09-01
Information query
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