Invention Grant
- Patent Title: Non-contact on-wafer S-parameter measurements of devices at millimeter-wave to terahertz frequencies
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Application No.: US14978146Application Date: 2015-12-22
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Publication No.: US09941560B2Publication Date: 2018-04-10
- Inventor: Kamal Sarabandi , Meysam Moallem , Armin Jam
- Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Applicant Address: US MI Ann Arbor
- Assignee: The Regents of The University of Michigan
- Current Assignee: The Regents of The University of Michigan
- Current Assignee Address: US MI Ann Arbor
- Agency: Harness, Dickey & Pierce, P.L.C.
- Main IPC: H01P3/00
- IPC: H01P3/00 ; H01P5/02 ; H01P1/02 ; H01P5/107 ; H01P5/12

Abstract:
A broadband fully micromachined transition from rectangular waveguide to cavity-backed coplanar waveguide line for submillimeter-wave and terahertz application is presented. The cavity-backed coplanar waveguide line is a planar transmission line that is designed and optimized for minimum loss while providing 50 Ohm characteristic impedance. This line is shown to provide less than 0.12 dB/mm loss over the entire J-band. The transition from cavity-backed coplanar waveguide to a reduced-height waveguide is realized in three steps to achieve a broadband response with a topology amenable to silicon micromachining. A novel waveguide probe measurement setup is also introduced and utilized to evaluate the performance of the transitions.
Public/Granted literature
- US20160181681A1 Non-Contact On-Wafer S-Parameter Measurements of Devices at Millimeter-Wave to Terahertz Frequencies Public/Granted day:2016-06-23
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