Invention Grant
- Patent Title: Method for making oxide semiconductor film
-
Application No.: US15338529Application Date: 2016-10-31
-
Publication No.: US09945022B2Publication Date: 2018-04-17
- Inventor: Da-Ming Zhuang , Ming Zhao , Ming-Jie Cao , Li Guo , Ze-Dong Gao , Yao-Wei Wei
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN201510219946 20150504
- Main IPC: H01L29/12
- IPC: H01L29/12 ; C23C14/08 ; H01L21/02 ; H01L29/24 ; H01L29/786 ; H01L29/66 ; C23C14/58 ; C03C17/245 ; C04B35/453 ; C23C14/34 ; H01L21/324 ; C23C14/35 ; C04B35/01 ; C04B35/50 ; C04B35/626 ; C04B35/645
Abstract:
A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
Public/Granted literature
- US20170044655A1 METHOD FOR MAKING OXIDE SEMICONDUCTOR FILM Public/Granted day:2017-02-16
Information query
IPC分类:
