Invention Grant
- Patent Title: Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby
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Application No.: US14815286Application Date: 2015-07-31
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Publication No.: US09947540B2Publication Date: 2018-04-17
- Inventor: Cheng-Yen Tsai , Da-Yuan Lee , JoJo Lee , Ming-Hsing Tsai , Hsueh Wen Tsau , Weng Chang , Ying-Chieh Hung , Yi-Hung Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/28 ; H01L21/321 ; C23C16/02 ; C23C16/455 ; H01L21/768

Abstract:
Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).
Public/Granted literature
- US20170032972A1 PRE-DEPOSITION TREATMENT AND ATOMIC LAYER DEPOSITION (ALD) PROCESS AND STRUCTURES FORMED THEREBY Public/Granted day:2017-02-02
Information query
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