Invention Grant
- Patent Title: Lateral PiN diodes and schottky diodes
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Application No.: US14476185Application Date: 2014-09-03
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Publication No.: US09947573B2Publication Date: 2018-04-17
- Inventor: Natalie B. Feilchenfeld , Vibhor Jain , Qizhi Liu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotskowski Safran Cole & Calderon, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/762 ; H01L27/08 ; H01L29/66 ; H01L29/868 ; H01L29/872 ; H01L29/165 ; H01L29/16 ; H01L29/161
Abstract:
Lateral PiN diodes and Schottky diodes with low parasitic capacitance and variable breakdown voltage structures and methods of manufacture are disclosed. The structure includes a diode with breakdown voltage determined by a dimension between p- and n-terminals formed in an i-region above a substrate.
Public/Granted literature
- US20160064475A1 LATERAL PiN DIODES AND SCHOTTKY DIODES Public/Granted day:2016-03-03
Information query
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