Invention Grant
- Patent Title: Eliminate sawing-induced peeling through forming trenches
-
Application No.: US15443678Application Date: 2017-02-27
-
Publication No.: US09947626B2Publication Date: 2018-04-17
- Inventor: Jie Chen , Hsien-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/498 ; H01L23/00 ; H01L23/29 ; H01L23/31 ; H01L21/56 ; H01L25/10 ; H01L25/00 ; H01L25/065 ; H01L23/538

Abstract:
A package includes a device die, a molding material encircling the device die, wherein a top surface of the molding material is substantially level with a top surface of the device die, and a bottom dielectric layer over the device die and the molding material. A plurality of redistribution lines (RDLs) extends into the bottom dielectric layer and electrically coupling to the device die. A top polymer layer is over the bottom dielectric layer, with a trench ring penetrating through the top polymer layer. The trench ring is adjacent to edges of the package. The package further includes Under-Bump Metallurgies (UBMs) extending into the top polymer layer.
Public/Granted literature
- US20170170128A1 Eliminate Sawing-Induced Peeling Through Forming Trenches Public/Granted day:2017-06-15
Information query
IPC分类: