Invention Grant
- Patent Title: CMOS circuits suitable for low noise RF applications
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Application No.: US12306935Application Date: 2007-06-27
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Publication No.: US09947662B2Publication Date: 2018-04-17
- Inventor: Paul Ronald Stribley , John Nigel Ellis
- Applicant: Paul Ronald Stribley , John Nigel Ellis
- Applicant Address: DE Erfurt
- Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG
- Current Assignee: X-FAB SEMICONDUCTOR FOUNDRIES AG
- Current Assignee Address: DE Erfurt
- Agency: Thompson Hine LLP
- Priority: GB0612921.7 20060630
- International Application: PCT/GB2007/050362 WO 20070627
- International Announcement: WO2008/001135 WO 20080103
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/092
Abstract:
A CMOS circuit comprises CMOS MOSFETs having n-type and p-type gates on the same substrate, wherein the substrate is divided into regions of n-type and p-type diffusions, and those diffusions are contained within a deeper n-type diffusion, used to junction isolate components within the deeper n-type diffusion from components outside of the deeper n-type diffusion.
Public/Granted literature
- US20090315119A1 CMOS CIRCUITS SUITABLE FOR LOW NOISE RF APPLICATIONS Public/Granted day:2009-12-24
Information query
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